D10L45SW - Schottky Barrier Rectifier

Inchange Semiconductor

Key Features

Low Forward Voltage.
High Frequency.
Extremely low reverse leakage.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

D10L45SW schottky barrier rectifier by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	D10L45SW
Manufacturer	Inchange Semiconductor
File Size	189.89 KB
Description	Schottky Barrier Rectifier
Datasheet	D10L45SW Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
D10L20U	Super Fast Recovery Rectifiers	Shindengen Electric Mfg.Co.Ltd
D10LC20	Super Fast Recovery Rectifiers	Shindengen Electric Mfg.Co.Ltd
D10LC20U	Super Fast Recovery Rectifiers	Shindengen Electric Mfg.Co.Ltd
D10LC20UR	Super Fast Recovery Rectifiers	Shindengen Electric Mfg.Co.Ltd
D10LC40	Super Fast Recovery Rectifiers	Shindengen Electric Mfg.Co.Ltd

Other Datasheets by Inchange Semiconductor

Part Number	Description
D10L200SW	Schottky Barrier Rectifier
D1069	Silicon NPN Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Schottky Barrier Rectifier INCHANGE Semiconductor D10L45SW FEATURES ·Low Forward Voltage ·High Frequency ·Extremely low reverse leakage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching mode power supplies ·Lighting application ·DC/DC Converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Peak Repetitive Reverse Voltage DC Blocking Voltage 45 V IF(AV) IFSM TJ Average Rectified Forward Current 10 A Non-repetitive Peak Surge Current (8.3ms single half sine-wave superimposed 120 A on rated load per diode) Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.