D111
DESCRIPTION
- High Power Dissipation-
: PC= 100W@TC= 25℃
- High Current Capability-
: IC = 10A
APPLICATIONS
- Designed for power amplifier , power switching ,DC-DC converter and regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100 V
VCEO VEBO
Collector-Emitter Voltage Emitter-Base Voltage
80 V 10 V
IC Collector Current-Continuous
10 A
IE Emitter Current-Continuous IB Base Current-Continuous
-10 A 3A
Collector Power Dissipation @TC=25℃
TJ Junction Temperature Tstg Storage Temperature
150 ℃ -65~150 ℃ isc website：.iscsemi.cn
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification
2SD111
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50m A ; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50m A ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=...
