D111 - Silicon NPN Power Transistor

Inchange Semiconductor

General Description

High Power Dissipation- : PC= 100W@TC= 25℃ High Current Capability- : IC = 10A APPLICATIONS

converter and regulator applications.

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Datasheet Details

Part number	D111
Manufacturer	Inchange Semiconductor
File Size	102.74 KB
Description	Silicon NPN Power Transistor
Datasheet	D111 Datasheet

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD111 DESCRIPTION ·High Power Dissipation- : PC= 100W@TC= 25℃ ·High Current Capability- : IC = 10A APPLICATIONS ·Designed for power amplifier , power switching ,DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage 80 V 10 V IC Collector Current-Continuous 10 A IE Emitter Current-Continuous IB Base Current-Continuous -10 A 3A PC Collector Power Dissipation @TC=25℃ 100 W TJ Junction Temperature Tstg Storage Temperature 150 ℃ -65~150 ℃ isc website：www.iscsemi.