Datasheet Details
| Part number | D111 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 102.74 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | D111-INCHANGE.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.
| Part number | D111 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 102.74 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | D111-INCHANGE.pdf |
|
|
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·High Power Dissipation- : PC= 100W@TC= 25℃ ·High Current Capability- : IC = 10A APPLICATIONS ·Designed for power amplifier , power switching ,DC-DC converter and regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage 80 V 10 V IC Collector Current-Continuous 10 A IE Emitter Current-Continuous IB Base Current-Continuous -10 A 3A PC Collector Power Dissipation @TC=25℃ 100 W TJ Junction Temperature Tstg Storage Temperature 150 ℃ -65~150 ℃ isc website：.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD111 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ;
RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
D1111 | 2SD1111 | Sanyo Semicon Device |
 |
D1113 | 2SD1113 | Hitachi Semiconductor |
|
D1115 | 2SD1115 | Hitachi Semiconductor |
 |
D1117 | 1A LOW DROPOUT LINEAR REGULATOR | YANGJING MICROELECTRONICS |
 |
D1118 | 2SD1118 | Fuji Electric |
| Part Number | Description |
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