Datasheet Details
| Part number | D1833 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.89 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | D1833-INCHANGE.pdf |
|
|
Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.
| Part number | D1833 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.89 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | D1833-INCHANGE.pdf |
|
|
|
·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 4A ·High Collector Power Dissipation ·Good Linearity of hFE ·Wide Area of Safe Operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) i.cnSYMBOL PARAMETER VALUE UNIT .iscsemVCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 7A ICM Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 1.5 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：.iscsemi.cn INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD1833 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;
| Part Number | Description |
|---|---|
| D1878 | NPN Transistor |