D1833
DESCRIPTION
- Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max.)@ IC= 4A
- High Collector Power Dissipation
- Good Linearity of h FE
- Wide Area of Safe Operation
APPLICATIONS
- Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) i.cn SYMBOL
PARAMETER
VALUE
UNIT
.iscsem VCBO
Collector-Base Voltage
100 V
VCEO
Collector-Emitter Voltage
80 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
7A
ICM Collector Current-Pulse
Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
10 A
1.5 W
150 ℃
Tstg Storage Temperature Range
-55~150
℃ isc Website：.iscsemi.cn
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification
2SD1833
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS...
