D1833 - Silicon NPN Power Transistor

Inchange Semiconductor

General Description

Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 4A High Collector Power Dissipation Good Linearity of hFE Wide Area of Safe Operation APPLICATIONS

Designed for low frequency power amplifier applications.

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D1833 silicon npn power transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	D1833
Manufacturer	Inchange Semiconductor
File Size	213.89 KB
Description	Silicon NPN Power Transistor
Datasheet	D1833 Datasheet

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD1833 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 4A ·High Collector Power Dissipation ·Good Linearity of hFE ·Wide Area of Safe Operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) i.cnSYMBOL PARAMETER VALUE UNIT .iscsemVCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V wwwVEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 7A ICM Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 1.5 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.