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D357 - Silicon NPN Power Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) Good Linearity of hFE Complement to Type 2SB527 APPLICATIONS

Designed for AF high power dirver applications.

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD357 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Good Linearity of hFE ·Complement to Type 2SB527 APPLICATIONS ·Designed for AF high power dirver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 100 V 5V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.8 A 1 W 10 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.