D357 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Good Linearity of hFE ·plement to Type 2SB527 APPLICATIONS ·Designed for AF high power dirver applications. RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;.
D357 Datasheet Details
| Part number | D357 |
|---|---|
| Datasheet | D357-INCHANGE.pdf |
| File Size | 134.97 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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