D371S45T - Fast Recovery Diode

Inchange Semiconductor

Key Features

Full diffusion process,flat type ceramic tube package.
Double sides cooling,High current.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

D371S45T fast recovery diode by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	D371S45T
Manufacturer	Inchange Semiconductor
File Size	173.62 KB
Description	Fast Recovery Diode
Datasheet	D371S45T Datasheet

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D371S45T Fast Recovery Diode FEATURES ·Full diffusion process,flat type ceramic tube package ·Double sides cooling,High current ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power converters ·AC/DC switching ·Phase controlled rectifying ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER VR Repetitive Peak Reverse Voltage IF(AV) Average Forward Current IFSM Surge Forward Current TJ Junction Temperature Tstg Storage Temperature Range CONDITIONS TC=85℃;f=50Hz tp=10ms VALUE UNIT 4500 V 330 A 6000 A -40~150 ℃ -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.4 UNIT ℃/W isc website：www.iscsemi.