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D40C7 - NPN Transistor

General Description

High DC Current Gain- : hFE = 10K-70K Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 50V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and low-speed switching applications ABSOLUT

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isc Silicon NPN Darlington Power Transistor D40C7 DESCRIPTION ·High DC Current Gain- : hFE = 10K-70K ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 50V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 13 V IC Collector Current-Continuous 0.5 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 1 A 6.