Inchange Semiconductor D45C9
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | D45C9 |
|---|---|
| Datasheet | D45C9 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Power Transistors |
| Buy | Stock & Price |
DESCRIPTION
●Low Saturation Voltage●Good Linearity of hFE
●Fast Switching Speeds
●Complement to Type D44C9
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for various specific and general purpose application such as: output and driver stages of amplifiers operating at frequencies from DC to greater than 1.0MHz series, shunt and switching regulators; low and high frequency inverters/ converters and many others.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -6 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -1 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 4.2 ℃/W isc website： 1 isc & iscsemi is registere...