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Inchange Semiconductor
D45H11
DESCRIPTION - Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A - Fast Switching Speeds - plement to Type D44H11 - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for general pourpose power amplification and switching such as output or driver stages in applications such as switching regulators,converters and power amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage -80 VEBO Emitter-Base Voltage -5 Collector Current-Continuous -10 Collector Current-Peak Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range -20 -55~150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX...