D689
Description
High DC Current Gain: hFE = 1000(Min)@ IC= 1A Collector-Emitter Sustaining Voltage: VCEO(SUS) = 100V(Min) Low Collector-Emitter Saturation Voltage: VCE(sat) = 1.5V(Max)@ IC= 1A Complement to Type 2SB679 2SD689.
- Part: D689
- Description: Silicon NPN Darlington Power Transistor
- Category: Transistor
- Manufacturer: Inchange Semiconductor
- Size: 130.94 KB