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D689 - Silicon NPN Darlington Power Transistor

General Description

High DC Current Gain: hFE = 1000(Min)@ IC= 1A Collector-Emitter Sustaining Voltage: VCEO(SUS) = 100V(Min) Low Collector-Emitter Saturation Voltage: VCE(sat) = 1.5V(Max)@ IC= 1A Complement to Type 2SB679 2SD689 APPLICATIONS Low frequency medium power amplifier and medium sp

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain: hFE = 1000(Min)@ IC= 1A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 100V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = 1.5V(Max)@ IC= 1A ·Complement to Type 2SB679 2SD689 APPLICATIONS ·Low frequency medium power amplifier and medium speed switching applications. ·Pulse motor driver, relay drive and hammer drive applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC PC Tj Tstg Collector-Base Voltage 100 V Collector-Emitter Voltage 100 V Emitter-Base Voltage 10 V Collector Current-Continuous Collector Power Dissipation TC=25℃ Junction Temperature 1.