Datasheet Details
| Part number | D726 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.45 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | D726-INCHANGE.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPNPower Transistor isc Product.
| Part number | D726 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.45 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | D726-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) ·High Power Dissipation ·plement to Type 2SB690 APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) i.cnSYMBOL PARAMETER VALUE UNIT .iscsemVCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 4A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 8A 40 W 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc Website：.iscsemi.cn INCHANGE Semiconductor isc Silicon NPNPower Transistor isc Product Specification 2SD726 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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D7261AD | UPD7261AD | NEC |
| Part Number | Description |
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