D726 - Silicon NPN Power Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) High Power Dissipation Complement to Type 2SB690 APPLICATIONS

Designed for low frequency power amplifier applications.

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D726 silicon npn power transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	D726
Manufacturer	Inchange Semiconductor
File Size	215.45 KB
Description	Silicon NPN Power Transistor
Datasheet	D726 Datasheet

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INCHANGE Semiconductor isc Silicon NPNPower Transistor isc Product Specification 2SD726 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) ·High Power Dissipation ·Complement to Type 2SB690 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) i.cnSYMBOL PARAMETER VALUE UNIT .iscsemVCBO Collector-Base Voltage 100 V wwwVCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 4A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 8A 40 W 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc Website：www.iscsemi.