D750 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·High Current Capability APPLICATIONS ·Designed for AF high power amplifier applications. IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA;.
D750 Details
| Part number | D750 |
|---|---|
| Datasheet | D750-INCHANGE.pdf |
| File Size | 102.37 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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