D750 - Silicon NPN Power Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) Wide Area of Safe Operation High Current Capability APPLICATIONS

Designed for AF high power amplifier applications.

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Datasheet Details

Part number	D750
Manufacturer	Inchange Semiconductor
File Size	102.37 KB
Description	Silicon NPN Power Transistor
Datasheet	D750 Datasheet

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD750 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·High Current Capability APPLICATIONS ·Designed for AF high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage IC Collector Current-Continuous 7V 15 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 30 A 100 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.