Datasheet Details
| Part number | D750 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 102.37 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | D750-INCHANGE.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.
| Part number | D750 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 102.37 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | D750-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·High Current Capability APPLICATIONS ·Designed for AF high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage IC Collector Current-Continuous 7V 15 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 30 A 100 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD750 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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D750 | Si NPN Transistor | Panasonic |
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| Part Number | Description |
|---|