Datasheet Details
| Part number | D823 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 127.25 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | D823-INCHANGE.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.
| Part number | D823 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 127.25 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | D823-INCHANGE.pdf |
|
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·Collector Current: IC= 6A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 90V(Min.) APPLICATIONS ·Designed for B/W TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak Total Power Dissipation PC @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 90 V 7 V 6 A 10 A 40 W 150 ℃ -55~150 ℃ isc website：.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD823 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA;
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