Download D823 Datasheet PDF
Inchange Semiconductor
D823
DESCRIPTION - Collector Current: IC= 6A - Collector-Emitter Breakdown Voltage- : V(BR)CEO= 90V(Min.) APPLICATIONS - Designed for B/W TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Total Power Dissipation @ TC=25℃ Junction Temperature Tstg Storage Temperature Range ℃ -55~150 ℃ isc website:.iscsemi.cn INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD823 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5m A; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 5m A; IE= 0 V(BR)EBO Emitter-Base Breakdown...