D837 - 2SD837

Inchange Semiconductor

General Description

High DC Current Gain- : hFE= 1000(Min.)@IC= 3A High Switching Speed APPLICATIONS Audio power amplifiers General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitte

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D837 2sd837 by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	D837
Manufacturer	Inchange Semiconductor
File Size	128.29 KB
Description	2SD837
Datasheet	D837 Datasheet

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD837 DESCRIPTION ·High DC Current Gain- : hFE= 1000(Min.)@IC= 3A ·High Switching Speed APPLICATIONS ·Audio power amplifiers ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 60 V 60 V 5V 4A 8A 40 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.