Datasheet Details
| Part number | D858 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 127.78 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | D858-INCHANGE.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.
| Part number | D858 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 127.78 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | D858-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·High Collector Power Dissipation APPLICATIONS ·Designed for AF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 60 V 5V IC Collector Current-Continuous 5A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD858 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
D858 | 2SD858 | Panasonic Semiconductor |
| Part Number | Description |
|---|---|
| D857 | Silicon NPN Power Transistor |