Inchange Semiconductor DF20LC30
Ultrafast Rectifier
FEATURES
●Guarding for over voltage protection●Dual rectifier construction,positive center tap
●Metal of silicon rectifier,majority carrier conduction
●Low forward voltage,high efficiency
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Switching power supply●DC/DC conveter
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 300 V IF(AV) Average Rectified Forward Current Per Leg Total device 10 20 A Nonrepetitive Peak Surge Current IFSM (Surge applied at rated load conditions half- 180 A wave, single phase, 60Hz) PD Maximum power dissipation 125 W TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website: 1 isc & iscsemi is registered trademark Fast Recovery Rectifier THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case DF20LC30 MAX 1.0 UNIT ℃/WELECTRICAL CHARACTERISTICS
(Ta...