DMG3N60SCT - N-Channel MOSFET

Datasheet Summary

Features

Static drain-source on-resistance: RDS(on) ≤ 3.5Ω.
Fully characterized avalanche voltage and current.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

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Datasheet Details

Part number	DMG3N60SCT
Manufacturer	INCHANGE
File Size	246.53 KB
Description	N-Channel MOSFET
Datasheet	DMG3N60SCT Datasheet
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isc N-Channel MOSFET Transistor DMG3N60SCT ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 3.5Ω ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Motor Control ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 3.3 IDM Drain Current-Single Pulsed 3.7 PD Total Dissipation @TC=25℃ 104 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 1.2 UNIT ℃/W isc website：www.iscsemi.

Published: Oct 22, 2020 |