Datasheet4U Logo Datasheet4U.com

DMG8880LK3 - N-Channel MOSFET

Datasheet Summary

Description

purpose applications.

Features

  • Drain Current.
  • ID= 16.5A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 30V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 7.5mΩ(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – DMG8880LK3

Datasheet Details

Part number DMG8880LK3
Manufacturer INCHANGE
File Size 261.40 KB
Description N-Channel MOSFET
Datasheet download datasheet DMG8880LK3 Datasheet
Additional preview pages of the DMG8880LK3 datasheet.

📁 Similar Datasheet

Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 16.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.5mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 30 V ±20 V ID Drain Current-Continuous 16.5 A IDM Drain Current-Single Pluse 48 A PD Total Dissipation @TC=25℃ 4.7 W TJ Max.
Published: |