Datasheet Details
| Part number | DMG9N65CTI |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 247.51 KB |
| Description | N-Channel MOSFET |
| Download | DMG9N65CTI Download (PDF) |
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| Part number | DMG9N65CTI |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 247.51 KB |
| Description | N-Channel MOSFET |
| Download | DMG9N65CTI Download (PDF) |
|
|
|
·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 9 A IDM Drain Current-Single Pluse 30 A PD Total Dissipation @TC=25℃ 13 W TJ Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 8.84 ℃/W DMG9N65CTI isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
isc N-Channel MOSFET Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
DMG9N65CTI | N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes |
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DMG9N65CT | N-Channel MOSFET | Diodes |
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