Datasheet Details
| Part number | DMN90H8D5HCT |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 256.29 KB |
| Description | N-Channel MOSFET |
| Datasheet | DMN90H8D5HCT-INCHANGE.pdf |
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Overview: isc N-Channel MOSFET Transistor DMN90H8D5HCT.
| Part number | DMN90H8D5HCT |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 256.29 KB |
| Description | N-Channel MOSFET |
| Datasheet | DMN90H8D5HCT-INCHANGE.pdf |
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|
·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 900 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 2.5 A IDM Drain Current-Single Pluse 3 A PD Total Dissipation @TC=25℃ 125 W TJ Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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DMN90H8D5HCT | N-CHANNEL MOSFET | Diodes |
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