Full PDF Text Transcription for DMP6180SK3-13 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
DMP6180SK3-13. For precise diagrams, and layout, please refer to the original PDF.
110mΩ(@VGS= -10V; ID= -12A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power Management Functions ·DC / DC Converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -14 PD Total Dissipation @TC=25℃ 40 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance MAX 3.13 UNIT ℃/W isc website：www.iscse
DMP6180SK3-13 Datasheet
