DMP6180SK3-13
Key Features
- Static drain-source on-resistance: RDS(on)≦110mΩ(@VGS= -10V; ID= -12A)
- Advanced trench process technology
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- Part: DMP6180SK3-13
- Description: P-Channel MOSFET
- Category: MOSFET
- Manufacturer: Inchange Semiconductor
- Size: 250.72 KB