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DSEI12-10A - Fast Recovery Diode

Key Features

  • With TO-220 packaging.
  • Metal silicon junction, majority carrier conduction.
  • Low power loss, high efficiency.
  • Guardring for overvoltage protection.
  • High surge capability.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Fast Recovery Diode DSEI12-10A FEATURES ·With TO-220 packaging ·Metal silicon junction, majority carrier conduction ·Low power loss, high efficiency ·Guardring for overvoltage protection ·High surge capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·High frequency inverters ·Reverse battery protection ·Polarity protection applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRMS VR Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage 1000 V IF(AV) Average Rectified Forward Current @Tc=128℃ 12 A IFRM Repetitive Peak Forward Current@Tc=128℃ 150 A Nonrepetitive Peak Surge Current IFSM 10 ms single half sine-wave superimposed on 75 A rated load conditio