Click to expand full text
Fast Recovery Diode
DSEI12-10A
FEATURES ·With TO-220 packaging ·Metal silicon junction, majority carrier conduction ·Low power loss, high efficiency ·Guardring for overvoltage protection ·High surge capability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching power supply ·High frequency inverters ·Reverse battery protection ·Polarity protection applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRMS
VR
Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage
1000
V
IF(AV)
Average Rectified Forward Current @Tc=128℃
12
A
IFRM
Repetitive Peak Forward Current@Tc=128℃
150
A
Nonrepetitive Peak Surge Current
IFSM
10 ms single half sine-wave superimposed on
75
A
rated load conditio
DSEI12-10A Datasheet
