DSEI12-10A
DSEI12-10A is Fast Recovery Diode manufactured by Inchange Semiconductor.
FEATURES
- With TO-220 packaging
- Metal silicon junction, majority carrier conduction
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge capability
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Switching power supply
- High frequency inverters
- Reverse battery protection
- Polarity protection applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRMS
Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage
IF(AV)
Average Rectified Forward Current @Tc=128℃
IFRM
Repetitive Peak Forward Current@Tc=128℃
Nonrepetitive Peak Surge Current
IFSM
10 ms single half sine-wave superimposed on
A rated load conditions;One shot(50Hz)
Maximum power dissipation
Tj
Junction Temperature
Tstg
Storage Temperature Range isc website：.iscsemi.
-40~150 ℃ -40~150 ℃
1 isc & iscsemi is registered...
