EBR10L45A
FEATURES
- Schottky Barrier Chip
- Guard Ring Die Construction for Transient Protection
- Low Power Loss/High Efficiency
- High Surge Capability
- High Current Capability，Low Forward Voltage Drop
- Plastic Material：UL Flammability
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for low-voltage,high frequency inverters，free wheeling and polarrity protection applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRWM
VR(RMS)
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
RMS Reverse Voltag
IF(AV)
Average Rectified Forward Current
(Rated VR) TC= 125℃
Nonrepetitive Peak Surge Current
IFSM
(Surge applied at rated load conditions half-
A wave, single phase, 60Hz)
Junction Temperature
-65~150 ℃
Tstg
Storage Temperature Range
-65~150 ℃ dv/dt Voltage Rate of Change (Rated VR)
1000 V/μs
EBR10L45A isc website：.iscsemi.
1 isc &...
