EKV550 - N-Channel MOSFET

Inchange Semiconductor

Datasheet Details

Part number	EKV550
Manufacturer	Inchange Semiconductor
File Size	245.47 KB
Description	N-Channel MOSFET
Datasheet	EKV550 Datasheet

General Description

·Designed for use in switch mode power supplies and general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 50 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 50 A PD Total Dissipation @TC=25℃ 85 W TJ Max.

Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.47 ℃/W EKV550 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;

Overview

isc N-Channel MOSFET Transistor.

Key Features

Drain Current.
ID=50A@ TC=25℃.
Drain Source Voltage- : VDSS=50V(Min).
Static Drain-Source On-Resistance : RDS(on) = 15mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	EKV550	N-Channel MOSFET	Sanken

More Datasheets from Inchange Semiconductor

Part Number	Description