ET190 - NPN Transistor

Datasheet Summary

Description

Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Min) @IC= 8A High reliability High D.C current gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PAR

INCHANGE

📥 Download Datasheet

Datasheet Details

Part number	ET190
Manufacturer	INCHANGE
File Size	208.23 KB
Description	NPN Transistor
Datasheet	ET190 Datasheet
Additional preview pages of the ET190 datasheet.

📁 Similar Datasheet

ET190 - NPN Transistor (Fuji Electric)
ET191 - TRIPLE DIFFUSED PLANER TYPE POWER DARLINGTON HIGH VOLTAGE HIGH SPEED SWITCHING (Fuji Electric)
ET191 - (ET191 / ET192) SMD Oscillators (EDC)
ET192 - (ET191 / ET192) SMD Oscillators (EDC)
ET1 - VARIOUS MOTOR AND HEATER CONTROL (NEC)
ET1-B3M1 - VARIOUS MOTOR AND HEATER CONTROL (NEC)
ET1-B3M1S - VARIOUS MOTOR AND HEATER CONTROL (NEC)
ET10005 - High-power Super Fast Rectifier (CITC)
ET10005CT - Dual High-power Super Fast Rectifier (CITC)
ET1001 - High-power Super Fast Rectifier (CITC)

Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text

isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Min) @IC= 8A ·High reliability ·High D.C current gain ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A IB Base Current-Continuous 1 A PC Collector Power Dissipation 80 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ET190 isc website：www.iscsemi.

Published: Sep 8, 2020 |