Datasheet Details
| Part number | ET190 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.23 KB |
| Description | NPN Transistor |
| Download | ET190 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor.
| Part number | ET190 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.23 KB |
| Description | NPN Transistor |
| Download | ET190 Download (PDF) |
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·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Min) @IC= 8A ·High reliability ·High D.C current gain ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A IB Base Current-Continuous 1 A PC Collector Power Dissipation 80 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ET190 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ;
IB= 0 V(BR)CBO Collector-Emitter Breakdown Voltage IC= 1mA ;
IB= 0 VCBO (SUS) Collector-Emitter Breakdown Voltage IC= 100mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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ET190 | NPN Transistor | Fuji Electric |
| Part Number | Description |
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