ET206 - NPN Transistor

Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V(Min) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

High frequency inverters Ge

INCHANGE

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Datasheet Details

Part number	ET206
Manufacturer	Inchange Semiconductor
File Size	208.51 KB
Description	NPN Transistor
Datasheet	ET206 Datasheet
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isc Silicon NPN Power Transistor INCHANGE Semiconductor ET206 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications. ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 850 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base voltage 10 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.

Published: Sep 8, 2020 |