Datasheet Details
| Part number | ET206 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.51 KB |
| Description | NPN Transistor |
| Download | ET206 Download (PDF) |
|
|
Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor ET206.
| Part number | ET206 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.51 KB |
| Description | NPN Transistor |
| Download | ET206 Download (PDF) |
|
|
|
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications.
·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 850 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base voltage 10 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor ET206 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
ET206 | NPN Transistor | Fuji Electric |
| Part Number | Description |
|---|