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FCD260N65S3 - N-Channel MOSFET

General Description

purpose applications.

Key Features

  • Drain Current.
  • ID= 12A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 650V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 260mΩ(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 260mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 650 V ±30 V ID Drain Current-Continuous 12 A IDM Drain Current-Single Pluse 30 A PD Total Dissipation @TC=25℃ 90 W TJ Max.