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FCPF1300N80Z - N-Channel MOSFET

Key Features

  • Drain-source on-resistance: RDS(on) ≤ 1.3Ω@10V.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor FCPF1300N80Z ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 1.3Ω@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·AC - DC Power Supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 6 IDM Drain Current-Single Pulsed 12 PD Total Dissipation @TC=25℃ 24 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 5.2 UNIT ℃/W isc website：www.iscsemi.