Datasheet4U Logo Datasheet4U.com

FCPF16N60 - N-Channel MOSFET

Key Features

  • Drain-source on-resistance: RDS(on) ≤ 0.26Ω@10V.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FCPF16N60 N-Channel MOSFET Fairchild Semiconductor
FCPF16N60NT 600V N-Channel MOSFET Fairchild Semiconductor
FCPF165N65S3L1 N-Channel MOSFET ON Semiconductor
FCPF165N65S3R0L N-Channel MOSFET ON Semiconductor
FCPF11N60 SuperFET MOSFET Fairchild Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
FCPF16N60NT N-Channel MOSFET
FCPF165N65S3L1 N-Channel MOSFET
FCPF11N60NT N-Channel MOSFET
FCPF125N65S3 N-Channel MOSFET
FCPF1300N80Z N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor INCHANGE Semiconductor FCPF16N60 ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.26Ω@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Be suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 16 IDM Drain Current-Single Pulsed 48 PD Total Dissipation @TC=25℃ 38 Tj Max.