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FCPF2250N80Z - N-Channel MOSFET

Datasheet Summary

Features

  • With TO-220F packaging.
  • High speed switching.
  • Low gate input resistance.
  • Standard level gate drive.
  • Easy to use.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – FCPF2250N80Z

Datasheet Details

Part number FCPF2250N80Z
Manufacturer INCHANGE
File Size 244.03 KB
Description N-Channel MOSFET
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isc N-Channel MOSFET Transistor FCPF2250N80Z ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 3.5 A IDM Drain Current-Single Pulsed 6.5 A PD Total Dissipation 21.9 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 5.
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