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isc N-Channel MOSFET Transistor
FCPF400N60
·FEATURES ·With TO-220F packaging ·Drain Source Voltage-
: VDSS ≥ 600V ·Static drain-source on-resistance:
RDS(on) ≤ 400mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Power supply ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous;@Tc=25℃
10
A
IDM
Drain Current-Single Pulsed
30
A
PD
Total Dissipation
31
W
Tj
Operating Junction Temperature
-55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX UNIT
4
℃/W
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FCPF400N60 Datasheet
