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FCPF650N80Z - N-Channel MOSFET

Key Features

  • With TO-220F package.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • ESD improved capability.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor FCPF650N80Z ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·ESD improved capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·Load switch ·Power management ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 10 6.3 24 PD Total Dissipation @TC=25℃ 30.5 Tj Max.