FCPF650N80Z - N-Channel MOSFET

Features

With TO-220F package.
Low input capacitance and gate charge.
Low gate input resistance.
ESD improved capability.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	FCPF650N80Z
Manufacturer	INCHANGE
File Size	197.72 KB
Description	N-Channel MOSFET
Datasheet	FCPF650N80Z Datasheet
Additional preview pages of the FCPF650N80Z datasheet.

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Full PDF Text Transcription

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor FCPF650N80Z ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·ESD improved capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·Load switch ·Power management ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 10 6.3 24 PD Total Dissipation @TC=25℃ 30.5 Tj Max.

Published: Sep 3, 2020 |