Inchange Semiconductor FDA24N50F
N-Channel MOSFET
FDA24N50F Specifications
- Mount Type : Through Hole
- Breakdown Voltage : 500V
- RDS(on) Max : 200mΩ
- Input Capacitance : 4.31nF
- Terminals : 3
- Rise Time : 105ns
- Fall Time : 87ns
- Max Power Dissipation : 270W
- Max Operating Temp : 150°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | FDA24N50F |
|---|---|
| Datasheet | FDA24N50F Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●With TO-3PN packaging●High speed switching
●Standard level gate drive
●Easy to use
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●
APPLICATIONS
●Power supply●Switching applications
●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous;Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 24 14 96 PD Total Dissipation 270 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.46 40 UNIT ℃/W ℃/W isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor FDA24N50F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V;...