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FDB035AN06A0 - N-Channel MOSFET

Key Features

  • With TO-263(D2PAK) packaging.
  • Single pulse and repetitive pulse.
  • High speed switching.
  • Low miller charge.
  • Easy to use.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operationz.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor FDB035AN06A0 ·FEATURES ·With TO-263(D2PAK) packaging ·Single pulse and repetitive pulse ·High speed switching ·Low miller charge ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·PFC stages, hard switching PWM stages and resonant switching ·PC Silverbox, Adapter, LCD & PDP TV ·Lighting, Server, Telecom and UPS ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 80 22 400 PD Total Dissipation 310 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THER