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FDB060AN08A0 Datasheet N-channel MOSFET

Manufacturer: Inchange Semiconductor

Overview: isc N-Channel MOSFET Transistor FDB060AN08A0 ·.

Key Features

  • With TO-263 packaging.
  • Drain Source Voltage- : VDSS ≥ 75V.
  • Static drain-source on-resistance: RDS(on) ≤ 6mΩ@VGS=10V.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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