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FDH45N50F - N-Channel MOSFET

Key Features

  • With TO-247 package.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor FDH45N50F ·FEATURES ·With TO-247 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 45 28.4 180 PD Total Dissipation @TC=25℃ 625 Tch Max.