Inchange Semiconductor FDI036N10A
N-Channel MOSFET
| Part No. | FDI036N10A |
|---|---|
| Datasheet | FDI036N10A Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●With TO-262 packaging●Drain Source Voltage- : VDSS ≥ 100V
●Static drain-source on-resistance: RDS(on) ≤ 4.5mΩ@VGS=10V
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
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APPLICATIONS
●Power supply●Switching applications
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ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 164 A IDM Drain Current-Single Pulsed 656 A PD Total Dissipation 263 W Tj Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 0.57 ℃/W isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor FDI036N10A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 250uA VGS(th) Gate Threshold Voltage VDS=VGS;...