Inchange Semiconductor FEP30FP
Ultrafast Rectifier
FEATURES
●Guarding for over voltage protection●Dual rectifier construction,positive center-tap
●Low forward voltage;high current capability
●Low thermal resistance
●Low power loss
●Superfast recovery times for high efficiency
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Switching power supply●Power switching circuits
●General purpose
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VRRM VRWM VR IF(AV) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current IFSM Non-repetitive Peak Surge Current TJ Max.Junction Temperature Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case INCHANGE Semiconductor FEP30FP VALUE 300 210 300 30 UNIT V A 300 A 150 ℃ -55~150 ℃ MAX 1 UNIT ℃/W isc website: 1 isc & iscsemi is registered trademark Ultrafast Rectifier INCHANGE Semiconductor FEP30FPELECTRICAL CHARACTERISTICS
(Ta=25℃) (Pul...