Inchange Semiconductor FEP30GP
Fast Recovery Rectifier
| Part No. | FEP30GP |
|---|---|
| Datasheet | FEP30GP Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Fast Recovery Rectifier |
| Buy | Stock & Price |
FEATURES
●Fast switching for high efficiency●Low forward voltage drop
●High current capability
●Low reverse leakage current
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Switching power supply●Power switching circuits
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 400 V IF(AV) Maximum average forward rectified current at TC = 100℃ 30 A Nonrepetitive Peak Surge Current IFSM (Surge applied at rated load conditions half- 300 A wave, single phase, 60Hz) PD Maximum power dissipation 125 W TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark Fast Recovery Rectifier THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case FEP30GP MAX 1 UNIT ℃/WELECTRICAL CHARACTERISTICS
(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%) SYMBOL P...
