Inchange Semiconductor FEP30JP
Ultrafast Rectifier
| Part No. | FEP30JP |
|---|---|
| Datasheet | FEP30JP Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Ultrafast Rectifier |
| Buy | Stock & Price |
FEATURES
●With TO-247 packaging●High junction temperature capability
●Low forward voltage
●High current capability
●Low power loss, high efficiency
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Switching power supply●Free-Wheeling diodes
●Reverse battery protection
●Center tap configuration
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VRRM VRMS VR IF(AV) Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Average Rectified Forward Current @Tc=110℃ VALUE UNI T 600 V 30 A IFSM RMS Forward Current 60 A Nonrepetitive Peak Surge Current IFSM (10ms single half sine-wave superimposed on 300 A rated load conditions) TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark Ultra fast Rectifier INCHANGE Semiconductor FEP30JP THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.0 UNIT ℃/WELECTRICAL CHARACTERISTICS
(Pul...