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Ultra fast Rectifier
INCHANGE Semiconductor
FFAF60UA60DN
FEATURES ·With TO-3PFa packaging ·High junction temperature capability ·Low forward voltage ·High current capability ·Low power loss, high efficiency ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching power supply ·Free-Wheeling diodes ·Reverse battery protection ·Center tap configuration
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VRRM VRMS
VR
IF(AV)
Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage
Average Rectified Forward Current @Tc=110℃
VALUE
UNI T
600
V
30
A
Nonrepetitive Peak Surge Current
IFSM
(10ms single half sine-wave superimposed on
180
A
rated load conditions)
TJ
Junction Temperature
-55~150 ℃
Tstg
Storage Temperature R
FFAF60UA60DN Datasheet
