High DC Current Gain-
: hFE = 1000(Min)@ IC= 3A
Low Collector-Emitter Saturation Voltage
100% tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Full PDF Text Transcription for FJB102 (Reference)
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isc Silicon NPN Power Transistor INCHANGE Semiconductor FJB102 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 3A ·Low Collector-Emitter Saturation Voltage ·100...
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hFE = 1000(Min)@ IC= 3A ·Low Collector-Emitter Saturation Voltage ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage IC Collector Current-Continuous ICP Collector Current-Pulse IB Base Current PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 5 V 8 A 15 A 1 A 80 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：w
FJB102 Datasheet
