FJB102 Overview
hFE = 1000(Min)@ IC= 3A ·Low Collector-Emitter Saturation Voltage ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor FJB102 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS...
