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FJL6820 - NPN Transistor

General Description

With TO-3PL packaging High collector-base voltage High power dissipation Low saturation voltage For color monitor Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(

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FJL6920 NPN Transistor

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isc Silicon NPN Power Transistor DESCRIPTION ·With TO-3PL packaging ·High collector-base voltage ·High power dissipation ·Low saturation voltage ·For color monitor ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 750 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 20 A ICP Base Current-Continuous Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 30 A 200 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ FJL6820 isc website：www.iscsemi.