Datasheet Details
| Part number | FJL6820 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.67 KB |
| Description | NPN Transistor |
| Datasheet | FJL6820-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | FJL6820 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.67 KB |
| Description | NPN Transistor |
| Datasheet | FJL6820-INCHANGE.pdf |
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·With TO-3PL packaging ·High collector-base voltage ·High power dissipation ·Low saturation voltage ·For color monitor ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 750 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 20 A ICP Base Current-Continuous Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 30 A 200 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ FJL6820 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base Breakdown Voltage IC= 0.5mA ;
IE= 0 BVCEO Collector-Emitter Breakdown Voltage IC= 5mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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FJL6820 | NPN Triple Diffused Planar Silicon Transistor | Fairchild Semiconductor |
| Part Number | Description |
|---|---|
| FJL6920 | NPN Transistor |