Datasheet Details
| Part number | FJL6920 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 192.45 KB |
| Description | NPN Transistor |
| Datasheet | FJL6920-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor FJL6920.
| Part number | FJL6920 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 192.45 KB |
| Description | NPN Transistor |
| Datasheet | FJL6920-INCHANGE.pdf |
|
|
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·High Switching Speed ·High Breakdown Voltage- : V(BR)CBO= 1700V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 20 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 30 A 200 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 5mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 11A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
FJL6920 | NPN Triple Diffused Planar Silicon Transistor | Fairchild Semiconductor |
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FJL6920 | NPN Triple Diffused Planar Silicon Transistor | ON Semiconductor |
| Part Number | Description |
|---|---|
| FJL6820 | NPN Transistor |