Large current capacitance
High Power Dissipation
Low saturation voltage
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
High speed switching applications
Suitable for Electronic Ballast and Switching Regulator
ABSOLUTE M
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon NPN Power Transistor
DESCRIPTION ·Large current capacitance ·High Power Dissipation ·Low saturation voltage ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·High speed switching applications ·Suitable for Electronic Ballast and Switching Regulator
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
700
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Pulse
8
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
2
A
75
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
FJP3305
isc Website：www.iscsemi.
FJP3305 Datasheet
