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FJP3305 - Silicon NPN Transistor

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Description

Large current capacitance High Power Dissipation Low saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed switching applications Suitable for Electronic Ballast and Switching Regulator ABSOLUTE M

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Datasheet Details

Part number FJP3305
Manufacturer INCHANGE
File Size 215.01 KB
Description Silicon NPN Transistor
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isc Silicon NPN Power Transistor DESCRIPTION ·Large current capacitance ·High Power Dissipation ·Low saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed switching applications ·Suitable for Electronic Ballast and Switching Regulator ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 4 A ICM Collector Current-Pulse 8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 75 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ FJP3305 isc Website：www.iscsemi.
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