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FMH08N80E - N-Channel MOSFET

Features

  • Drain Current ID= 8A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 800V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 1.45Ω(Max).
  • Fast Switching.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – FMH08N80E

Datasheet Details

Part number FMH08N80E
Manufacturer INCHANGE
File Size 227.82 KB
Description N-Channel MOSFET
Datasheet download datasheet FMH08N80E Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.45Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS · generally applied in high efficiency switch mode power supplies. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 8 A IDM Drain Current-Single Plused 32 A PD Total Dissipation @TC=25℃ 270 W Tj Max.
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