FMH20N60S1
FMH20N60S1 is N-Channel MOSFET manufactured by Inchange Semiconductor.
FEATURES
- Static Drain-Source On-Resistance
: RDS(on) = 190mΩ(Max)
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATION
- Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
Gate-Source Voltage-Continuous
Drain Current-Continuous
Drain Current-Single Pluse
Total Dissipation @TC=25℃
Max. Operating Junction Temperature
Tstg
Storage Temperature
THERMAL CHARACTERISTICS
SYMBOL Rth j-c
PARAMETER Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th)
Gate Threshold Voltage
RDS(on)
Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain...
