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FMH20N60S1 - N-Channel MOSFET

Features

  • Static Drain-Source On-Resistance : RDS(on) = 190mΩ(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – FMH20N60S1

Datasheet Details

Part number FMH20N60S1
Manufacturer INCHANGE
File Size 316.88 KB
Description N-Channel MOSFET
Datasheet download datasheet FMH20N60S1 Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 190mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.
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