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FMH35N60S1FD - N-Channel MOSFET

Features

  • With TO-3PN packaging.
  • High speed switching.
  • Standard level gate drive.
  • Easy to use.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – FMH35N60S1FD

Datasheet Details

Part number FMH35N60S1FD
Manufacturer INCHANGE
File Size 254.23 KB
Description N-Channel MOSFET
Datasheet download datasheet FMH35N60S1FD Datasheet
Additional preview pages of the FMH35N60S1FD datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor FMH35N60S1FD ·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 33 22 105 PD Total Dissipation 270 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.46 UNIT ℃/W isc website：www.iscsemi.
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