FMV09N70E - N-Channel MOSFET

Inchange Semiconductor

Key Features

drain-source on-resistance: RDS(on) ≤ 1.4Ω (max).
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

FMV09N70E n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	FMV09N70E
Manufacturer	Inchange Semiconductor
File Size	235.89 KB
Description	N-Channel MOSFET
Datasheet	FMV09N70E Datasheet

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isc N-Channel MOSFET Transistor ·FEATURES ·drain-source on-resistance: RDS(on) ≤ 1.4Ω (max) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching regulators ·UPS (Uninterruptible Power Supply) ·DC-DC converters INCHANGE Semiconductor FMV09N70E ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 700 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 9 IDM Drain Current-Single Pulsed 36 PD Total Dissipation @TC=25℃ 85 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 1.