FQD13N10 Overview
Key Features
- Static drain-source on-resistance: RDS(on)≤0.18Ω
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- Switching applications
| Part | FQD13N10 |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 273.83 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| FQD13N10L | Fairchild Semiconductor | 100V LOGIC N-Channel MOSFET |
| FQD13N10 | Fairchild Semiconductor | 100V N-Channel MOSFET |