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FQP16N25C - N-Channel MOSFET

Key Features

  • With TO-220 packaging.
  • High speed switching.
  • Low gate input resistance.
  • Standard level gate drive.
  • Easy to use.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 250 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous;@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 15.6 9.8 62.